| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
в рублях |
|
|
The rule of type designation for discrete semiconductor devices
|
Published |
|
На языке оригинала
|
958,00
|
|
|
|
Semiconductor devices—Discrete devices and integrated circuits—_x000D_
Part 2: Rectifier diodes
|
Published |
|
На языке оригинала
|
3377,00
|
|
|
|
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors
|
Published |
|
На языке оригинала
|
2570,00
|
|
|
|
Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors
|
Published |
|
На языке оригинала
|
2318,00
|
|
|
|
Semiconductor devices - Part 10: Generic specification for discrete devices and integrated circuits
|
Published |
|
На языке оригинала
|
2167,00
|
|
|
|
Semiconductor devices―Mechanical and climatic test methods―Part 1: General
|
Published |
|
На языке оригинала
|
958,00
|
|
|
|
Semiconductor devices―Mechanical and climatic test methods―Part 2: Low air pressure
|
Published |
|
На языке оригинала
|
958,00
|
|
|
|
Semiconductor devices - Mechanical and climatic tests methods - Part 3: External visual examination
|
Published |
|
На языке оригинала
|
958,00
|
|
|
|
Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
|
Published |
|
На языке оригинала
|
958,00
|
|
|
|
Semiconductor devices—Mechanical and climatic test methods—Part 11: Rapid change of temperature—Two-fluid-bath method
|
Published |
|
На языке оригинала
|
958,00
|
|
|
|
Semiconductor devices—Mechanical and climatic test methods—Part 12: Vibration, variable frequency
|
Published |
|
На языке оригинала
|
958,00
|
|
|
|
Semiconductor devices—Mechanical and climatic test methods—Part 13: Salt atmosphere
|
Published |
|
На языке оригинала
|
958,00
|
|
|
|
Semiconductor devices—Mechanical and climatic test methods—Part 14: Robustness of terminations（lead integrity）
|
Published |
|
На языке оригинала
|
1210,00
|
|
|
|
Semiconductor devices—Mechanical and climatic test methods—Part 15: Resistance to soldering temperature for through-hole mounted devices
|
Published |
|
На языке оригинала
|
958,00
|
|
|
|
Semiconductor devices—Mechanical and climatic test methods—Part 17: Neutron irradiation
|
Published |
|
На языке оригинала
|
958,00
|
|
|
|
Semiconductor devices—Mechanical and climatic test methods—Part 18: Ionizing radiation (total dose)
|
Published |
|
На языке оригинала
|
1058,00
|
|
|
|
Semiconductor devices—Mechanical and climatic test methods—Part 19: Die shear strength
|
Published |
|
На языке оригинала
|
958,00
|
|
|
|
Semiconductor devices—Mechanical and climatic test methods—Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat
|
Published |
|
На языке оригинала
|
1613,00
|
|
|
|
Semiconductor devices—Mechanical and climatic test methods—Part 21: Solderability
|
Published |
|
На языке оригинала
|
1411,00
|
|
|
|
Semiconductor devices—Mechanical and climatic test methods—Part 22: Bond strength
|
Published |
|
На языке оригинала
|
1411,00
|
|
| Страницы: 1 / 2 / 3 / 4 |