| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
в рублях |
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Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristorsпјЊambient or case-ratedпјЊup to 100A
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Published |
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На языке оригинала
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1382,00
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Methods of the measurement for hydrogen thyratron tubes
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Published |
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На языке оригинала
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1094,00
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Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs)пјЊambient or case-ratedпјЊup to 100A
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Published |
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На языке оригинала
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1382,00
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General specification for pulse thyratrons
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Published |
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На языке оригинала
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749,00
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Blank detail specification for hydrogen thyratrons
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Published |
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На языке оригинала
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749,00
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Semiconductor devices Discret devices Blank detail specification for bidirectional triode thyristors(triacs),ambient and case-rated,for currents greater than 100A
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Published |
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На языке оригинала
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1382,00
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Semiconductor devices Discrete devices Part 6:Thyristors Section Three-Blank detail specification for reverse blocking triode thyristors,ambient and case-rated,for currents greater than 100A
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Published |
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На языке оригинала
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1382,00
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Semiconductor devices—Part 6: Thyristors
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Published |
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На языке оригинала
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7661,00
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General requirements for thyristors for HVDC transmission
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Published |
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На языке оригинала
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1382,00
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Static var compensators(SVC)—Testing of thyristor valves
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Published |
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На языке оригинала
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2707,00
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General requirements for light-trigged thyristors for HVDC transmission
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Published |
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На языке оригинала
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1210,00
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