| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
в рублях |
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Semiconductor devices—Discrete devices—Part 7:Bipolar transistors
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Published |
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На языке оригинала
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7027,00
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Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification
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Published |
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На языке оригинала
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1382,00
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Blank detail specification for bipolar transistors for switching applications
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Published |
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На языке оригинала
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1382,00
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Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
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Published |
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На языке оригинала
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1613,00
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Blank detail specification forindustrial heating triodes
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Published |
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На языке оригинала
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634,00
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Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification
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Published |
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На языке оригинала
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1613,00
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Blank detail specification for case-rated bipolar transistors for low-frequency amplification
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Published |
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На языке оригинала
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1382,00
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Test methods of safe operating area for power transistors
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Published |
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На языке оригинала
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1094,00
|
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Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification
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Published |
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На языке оригинала
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1382,00
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Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT)
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Published |
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На языке оригинала
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3629,00
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Technical specification of power electronic devices for high-voltage direct current (HVDC) transmission using voltage sourced converters (VSC)
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Published |
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На языке оригинала
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1613,00
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