| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
в рублях |
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Electronic-grade polycrystalline silicon
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Published |
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На языке оригинала
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1382,00
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Monocrystalline silicon polished wafers
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Published |
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На языке оригинала
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1210,00
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Monocrystalline silicon as cut wafers and lapped wafers
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Published |
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На языке оригинала
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1210,00
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Test method for measuring flat length wafers of silicon and other electronic materials
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Published |
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На языке оригинала
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1210,00
|
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Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques
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Published |
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На языке оригинала
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1210,00
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Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
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Published |
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На языке оригинала
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2246,00
|
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Silicon epitaxial wafers
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Published |
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На языке оригинала
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1210,00
|
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Test method for measuring diameter of semiconductor wafer
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Published |
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На языке оригинала
|
1210,00
|
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|
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Test method for sheet resistance of silicon epitaxial, diffused and ion-implanted layers using a collinear four-probe array
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Published |
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На языке оригинала
|
1210,00
|
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Testing method for determination of radial interstitial oxygen variation in silicon
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Published |
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На языке оригинала
|
1210,00
|
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Semiconductor materials-terms and definitions
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Published |
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На языке оригинала
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3398,00
|
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Designations of semiconductor materials
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Published |
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На языке оригинала
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1210,00
|
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Test mothod for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
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Published |
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На языке оригинала
|
1210,00
|
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Specification for a universal wafer grid
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Published |
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На языке оригинала
|
1210,00
|
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Specification for establishing a wafer coordinate system
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Published |
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На языке оригинала
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1094,00
|
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Gallium arsenide single crystal
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Published |
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На языке оригинала
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1210,00
|
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Gallium phosphide single crystal
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Published |
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На языке оригинала
|
1382,00
|
|
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Indium phosphide single crystal
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Published |
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На языке оригинала
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1382,00
|
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|
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Test methods for photoluminescence analysis of single crystal silicon for III-V impurities
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Published |
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На языке оригинала
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1382,00
|
|
|
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Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry
|
Published |
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На языке оригинала
|
1210,00
|
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