| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
в рублях |
|
|
Trichlorosilane for silicon epitaxial
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Polished monocrystalline silicon carbide wafers
|
Published |
|
На языке оригинала
|
2477,00
|
|
|
|
Gallium nitride based epitaxial layer for LED lighting
|
Published |
|
На языке оригинала
|
2822,00
|
|
|
|
GaP substrates for LED epitaxial chips
|
Published |
|
На языке оригинала
|
1786,00
|
|
|
|
GaAs substrates for LED epitaxial chips
|
Published |
|
На языке оригинала
|
1786,00
|
|
|
|
Polished mono-crystalline sapphire substrate product
|
Published |
|
На языке оригинала
|
2477,00
|
|
|
|
Germanium substrate for solar cell
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Test method for measuring diameter of monocrystalline silicon carbide wafers
|
Published |
|
На языке оригинала
|
1382,00
|
|
|
|
Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
|
Published |
|
На языке оригинала
|
1382,00
|
|
|
|
Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching
|
Published |
|
На языке оригинала
|
1382,00
|
|
|
|
Monocrystalline sapphire bar
|
Published |
|
На языке оригинала
|
1786,00
|
|
|
|
Soldering fluxes for high-quality interconnections in electronics assembly
|
Published |
|
На языке оригинала
|
2477,00
|
|
|
|
Requirements for solder paste for high-quality interconnections in electronics assembly
|
Published |
|
На языке оригинала
|
2189,00
|
|
|
|
Requirements for solders for high-quality interconnections in electronics assembly
|
Published |
|
На языке оригинала
|
2189,00
|
|
|
|
Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Test method for instrumental neutron activation analysis (INAA) of silicon
|
Published |
|
На языке оригинала
|
2189,00
|
|
|
|
Specification for order entry format of silicon wafers
|
Published |
|
На языке оригинала
|
2189,00
|
|
|
|
Silicon powder—Determination of total carbon content—Infrared absorption method after combustion in an induction furnace
|
Published |
|
На языке оригинала
|
1670,00
|
|
|
|
Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
|
Published |
|
На языке оригинала
|
1786,00
|
|
|
|
Specification for alphanumeric marking of silicon wafers
|
Published |
|
На языке оригинала
|
1786,00
|
|
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