| Обозначение | Заглавие на русском языке | Статус | Язык документа | Цена (с НДС 20%)
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Semiconductor devices - Mechanical and climatic test methods -- Part 9: Permanence of marking (IEC 60749-9:2017) (german version)
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На немецком языке
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Semiconductor devices - Mechanical and climatic test methods -- Part 9: Permanence of marking (IEC 60749-9:2017) (english version)
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На английском языке
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Semiconductor devices - Mechanical and climatic test methods -- Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level (IEC 60749-28:2017) (german version)
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На немецком языке
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Semiconductor devices - Mechanical and climatic test methods -- Part 28: Electrostatic discharge (ESD) sensitivity testing - Charged device model (CDM) - device level (IEC 60749-28:2017) (english version)
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На английском языке
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Semiconductor devices - Mechanical and climatic test methods -- Part 43: Guidelines for IC reliability qualification plans (IEC 60749-43:2017) (german version)
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На немецком языке
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Semiconductor devices - Mechanical and climatic test methods -- Part 43: Guidelines for IC reliability qualification plans (IEC 60749-43:2017) (english version)
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На английском языке
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Semiconductor devices - Mechanical and climatic test methods -- Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices ( IEC 60749-44:2016) (german version)
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На немецком языке
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Semiconductor devices - Mechanical and climatic test methods -- Part 44: Neutron beam irradiated single event effect (SEE) test method for semiconductor devices ( IEC 60749-44:2016) (english version)
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На английском языке
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Semiconductor devices - Micro-electromechanical devices -- Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area (IEC 62047-25:2016) (german version)
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На немецком языке
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Semiconductor devices - Micro-electromechanical devices -- Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area (IEC 62047-25:2016) (english version)
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На английском языке
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Semiconductor devices - Semiconductor interface for human body communication -- Part 1: General requirements ( IEC 62779-1:2016) (english version)
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На английском языке
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Semiconductor devices - Semiconductor interface for human body communication -- Part 1: General requirements ( IEC 62779-1:2016) (german version)
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На немецком языке
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Semiconductor devices - Semiconductor interface for human body communication -- Part 2: Characterization of interfacing performances ( IEC 62779-2:2016) (english version)
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На английском языке
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Semiconductor devices - Semiconductor interface for human body communication -- Part 2: Characterization of interfacing performances ( IEC 62779-2:2016) (german version)
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На немецком языке
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Semiconductor devices - Semiconductor interface for human body communication -- Part 3: Functional type and its operational conditions ( IEC 62779-3:2016) (german version)
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На немецком языке
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Semiconductor devices - Semiconductor interface for human body communication -- Part 3: Functional type and its operational conditions ( IEC 62779-3:2016) (english version)
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На английском языке
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Mechanical standardization of semiconductor devices -- Part 1: General rules for the preparation of outline drawings of discrete devices (IEC 60191-1:2018) (german version)
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На немецком языке
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Mechanical standardization of semiconductor devices -- Part 1: General rules for the preparation of outline drawings of discrete devices (IEC 60191-1:2018) (english version)
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На английском языке
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Semiconductor devices -- Part 16-6: Microwave integrated circuits - Frequency multipliers ((IEC 60747-16-6:2019) EN IEC 60747-16-6:2019) (english version)
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На английском языке
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Semiconductor devices -- Part 16-6: Microwave integrated circuits - Frequency multipliers ((IEC 60747-16-6:2019) EN IEC 60747-16-6:2019) (german version)
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На немецком языке
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